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|Title:||L-Band GaAs MMIC Power Amplifier Design|
|Authors:||Lakhani, A. N.|
|Abstract:||A Monolithic Microwave Integrated Circuit, or MMIC, is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz). This thesis describes design of L-band MMIC Power Amplifier (PA) using UMS 0.25 μm Pseudomorphic High Electron Mobility Transistor (0.25 μm P-HEMT) utilising GaAs MMIC fabrication process. GaAs has two fundamental advantages over silicon (Si), the traditional material for IC realisation: device (transistor) speed and a semi-insulating substrate. Both factors help with the design of high-frequency circuit functions. The main goal of this work is to design L-band MMIC driver PA with 𝑃𝑜𝑢𝑡 > 29𝑑𝐵𝑚 and gain > 16db for ISRO (to use in appropriate space missions which will use L-band). The other important goal is to design another PA with 𝑃𝑜𝑢𝑡 ≈ 30 𝑑𝐵𝑚 and gain ≈ 30 db, which has been achieved using two-stage PA design. The response of the circuit is made as close as possible to the circuit made from ideal lumped device. UMS Foundry offers high-performance GaAs MMIC process technologies for MMIC design & production. Every design step, starting from device selection, I-V characteristics, bias point selection, load and source pull technique, matching network design, stability aspects and bias network design etc. have been discussed. A highly reliable operation is required for space applications to ensure a lifetime that typically spans for 5-15 years. This is achieved by de-rating the operating stress to the device and other components, thereby operating them far below the process maximum ratings. All care has been taken while designing this MMIC to ensure that it will comply with space standards and can be used in required space mission of ISRO. The design of “L-Band MMIC Power Amplifier” has been completed and simulations have been done using ADS. S-parameter simulation as well as non-linear Harmonic Balance simulation has been performed to analyse the circuit’s performance in linear and non-linear operating conditions. EM-simulations were performed to take coupling and parasitic effects into account. Finally, yield and sensitivity analysis was performed to verify the high circuit yield and design centering, as high yield is a must for MMIC circuit design, wherein there is no scope of post-fabrication tuning. So, during the project, every minute detail has to be keenly looked into to ensure the required performance and its physical realization as per space norms.|
|Appears in Collections:||03. EE|
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